Step-by-step capping and strain state of GaN/AlN quantum dots studied by grazing-incidence diffraction anomalous fine structure
نویسندگان
چکیده
J. Coraux,1,2,* M. G. Proietti,3 V. Favre-Nicolin,1,2 H. Renevier,1,2 and B. Daudin1 1Commissariat l’Energie Atomique, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NRS, 17 rue des martyrs, 38054 Grenoble Cedex 9, France 2Université Joseph Fourier, BP 53, 38041, Grenoble Cedex 9, France 3Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, c. Pedro Cerbuna 12, 50009 Zaragoza, Spain Received 5 October 2005; revised manuscript received 6 February 2006; published 24 May 2006
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